欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: FDB8874
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench MOSFET
中文描述: 21 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263AB, 3 PIN
文件頁數(shù): 4/11頁
文件大小: 267K
代理商: FDB8874
2004 Fairchild Semiconductor Corporation
FDB8874 Rev. A2
F
Figure 5. Forward Bias Safe Operating Area
NOTE:
Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
Typical Characteristics
T
C
= 25
°
C unless otherwise noted
0.1
1
10
100
1000
1
10
60
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
C
= 25
C
SINGLE PULSE
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
10
μ
s
1ms
DC
100
μ
s
10ms
1
0.01
10
100
0.1
t
AV
, TIME IN AVALANCHE (ms)
1
10
500
100
I
A
,
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
t
0
40
80
120
160
2.0
2.5
3.0
3.5
4.0
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
T
J
= 175
o
C
T
J
= -55
o
C
T
J
= 25
o
C
0
40
80
120
160
0
0.2
0.4
0.6
0.8
1.0
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 4V
V
GS
= 3V
V
GS
= 5V
2
4
6
8
10
12
2
4
6
8
10
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 40A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-80
-40
0
40
80
120
160
200
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 10V, I
D
= 40A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
相關(guān)PDF資料
PDF描述
FDB8876 N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm
FDB8878 N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
FDB8880 N-Channel PowerTrench MOSFET
FDP8880 N-Channel PowerTrench MOSFET
FDB8896 N-Channel PowerTrench MOSFET 30V, 93A, 5.7 m ohm
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB8876 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8878 功能描述:MOSFET 30V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8880 功能描述:MOSFET NCH PWR TRNCH MOSFET 30V 54A 11.6 OHMS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8896 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB8896_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET
主站蜘蛛池模板: 平果县| 镇远县| 汾西县| 洪泽县| 喀什市| 浦江县| 湖北省| 乃东县| 金沙县| 股票| 玛纳斯县| 保靖县| 黄浦区| 石屏县| 桂林市| 怀仁县| 高陵县| 临江市| 五家渠市| 山阳县| 金平| 泰兴市| 宜章县| 博乐市| 宁城县| 长葛市| 资阳市| 周至县| 黑水县| 个旧市| 白朗县| 常州市| 哈尔滨市| 临沭县| 龙口市| 宿州市| 板桥市| 富平县| 新干县| 桃园市| 丰城市|