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參數資料
| 型號： | FDC6310P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 2200 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | FDC6310P |
April 2001
FDC6310P
Dual P-Channel 2.5V Specified PowerTrench
ò
MOSFET
2001 Fairchild Semiconductor Corporation
FDC6310P Rev C(W)
General Description
These P-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
–2.2 A, –20 V. R
DS(ON)
= 125 m
@ V
GS
= –4.5 V
R
DS(ON)
= 190 m
@ V
GS
= –2.5 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
SuperSOT TM -6 package: small footprint 72%
smaller than standard SO-8); low profile (1mm thick)
D1
S2
G1
D2
S1
G2
SuperSOT -6
3
2
1
4
5
6
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
–20
±
12
–2.2
–6
0.96
0.9
0.7
–55 to +150
Units
V
V
A
W
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
– Pulsed
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
130
60
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
.310
FDC6310P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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| FDC6312P | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
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| FDC6318P | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| FDC6320 | Dual N & P Channel , Digital FET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6310P_Q | 功能描述:MOSFET Dual P-Ch 2.5V Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6312P_Q | 功能描述:MOSFET SSOT-6 P-CH DUAL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6318 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel 1.8V PowerTrench Specified MOSFET |
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