- 您現在的位置：買賣IC網 > PDF目錄375768 > FDC6318 (Fairchild Semiconductor Corporation) Dual P-Channel 1.8V PowerTrench Specified MOSFET PDF資料下載
參數資料
| 型號： | FDC6318 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| 中文描述： | 雙P溝道MOSFET的1.8伏的PowerTrench指定 |
| 文件頁數： | 2/5頁 |
| 文件大小： | 165K |
| 代理商： | FDC6318 |
FDC6318P Rev D (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –10 V,
V
GS
= 0 V
V
GS
= 8 V,
V
DS
= 0 V
V
GS
= –8 V,
V
DS
= 0 V
I
D
= –250
μ
A
–12
V
Breakdown Voltage Temperature
–2.9
mV/
°
C
μ
A
nA
nA
–1
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –2.5 A
V
GS
= –2.5 V, I
D
= –2 A
V
GS
= –1.8 V, I
D
= –1.6 A
V
GS
= –4.5 V, I
D
= –2.5A, T
J
=125
°
C
V
GS
= –4.5 V, V
DS
= –5 V
V
DS
= –5 V,
I
D
= –2.5 A
I
D
= –250
μ
A
–0.4
–0.7
2.3
69
93
135
85
–1.5
V
Gate Threshold Voltage
mV/
°
C
m
90
125
200
120
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–6
A
S
8
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
455
194
134
pF
pF
pF
V
DS
= –6 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
9
14
21
17
5.4
1.1
1.3
18
25
34
31
8
ns
ns
ns
ns
nC
nC
nC
V
DD
= –6 V,
V
GS
= –4.5 V, R
GEN
= 6
I
D
= –1 A,
V
DS
= –6 V,
V
GS
= –4.5 V
I
D
= –2.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
–0.8
A
V
SD
V
GS
= 0 V,
I
S
= –0.8 A
(Note 2)
–0.7
–1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 130
°
C/W when
mounted on a 0.125
in
pad of 2 oz.
copper.
b) 140°C/W when mounted
on a .004 in
pad of 2 oz
copper
c) 180°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6318P | Dual P-Channel 1.8V PowerTrench Specified MOSFET |
| FDC6320 | Dual N & P Channel , Digital FET |
| FDC6320C | Dual N & P Channel , Digital FET |
| FDC6321C | Dual N & P Channel , Digital FET |
| FDC6322 | Dual N & P Channel , Digital FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6318P | 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6318P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6318P_Q | 功能描述:MOSFET SuperSOT-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6320 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6320C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。