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參數資料
| 型號： | FDC6320 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Dual N & P Channel , Digital FET |
| 中文描述： | 雙N |
| 文件頁數： | 2/7頁 |
| 文件大小： | 100K |
| 代理商： | FDC6320 |
DMOS Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= 20 V, V
GS
= 0 V,
N-Ch
25
V
P-Ch
-25
BV
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
N-Ch
25
mV /
o
C
P-Ch
-20
I
DSS
Zero Gate Voltage Drain Current
N-Ch
1
μA
T
J
= 55°C
10
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-20 V, V
GS
= 0 V,
P-Ch
-1
μA
T
J
= 55°C
-10
I
GSS
Gate - Body Leakage Current
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
N-Ch
100
nA
P-Ch
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
/
T
J
Gate Threshold Voltage Temp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
I
D
= -250 μA, Referenced to 25
o
C
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
GS
= 2.7 V, I
D
= 0.2 A
N-Ch
-2.1
mV /
o
C
P-Ch
1.9
V
GS(th)
Gate Threshold Voltage
N-Ch
0.65
0.85
1.5
V
P-Ch
-0.65
-1
-1.5
R
DS(ON)
Static Drain-Source On-Resistance
N-Ch
3.8
5
T
J
=125°C
6.3
9
V
GS
= 4.5 V, I
D
= 0.4 A
V
GS
= -2.7 V, I
D
= -0.05 A
3.1
4
P-Ch
10.6
13
T
J
=125°C
15
21
V
GS
= -4.5 V, I
D
= -0.2 A
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 5 V, I
D
= 0.4 A
V
DS
= -5 V, I
D
= -0.2 A
7.9
10
I
D(ON)
On-State Drain Current
N-Ch
0.2
A
P-Ch
-0.05
g
FS
Forward Transconductance
N-Ch
0.2
S
P-Ch
0.135
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
N-Channel
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
9.5
pF
P-Ch
11
C
oss
Output Capacitance
N-Ch
6
pF
P-Ch
7
C
rss
Reverse Transfer Capacitance
N-Ch
1.3
pF
P-Ch
1.4
FDC6320C.Rev C
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6320C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6320C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC6320C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
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