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參數資料
| 型號： | FDC6321C |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N & P Channel , Digital FET |
| 中文描述： | 0.68 mA, 25 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 7/11頁 |
| 文件大小： | 273K |
| 代理商： | FDC6321C |
FDC6321C.RevB
Typical Electrical Characteristics: P-Channel (continued)
Figure 19. Maximum Safe Operating Area.
0
0.3
0.6
Q , GATE CHARGE (nC)
0.9
1.2
1.5
1.8
0
1
2
3
4
5
-
G
I = -0.5A
-15V
V = -5V
-10V
Figure 17. Gate Charge Characteristics
.
Figure 20. Single Pulse Maximum Power
Dissipation.
0.1
0.3
-V , DRAIN TO SOURCE VOLTAGE (V)
0.5
1
5
10
15
25
5
10
20
50
100
150
C
C s
f = 1 MHz
V = 0 V
C ss
C s
Figure 18. Capacitance Characteristics
.
Figure 21. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
0.1
0.2
0.5
1
2
5
10
20
40
0.01
0.03
0.1
0.3
1
2
- V , DRAIN-SOURCE VOLTAGE (V)
-
RDS(ON)LMT
D
A
DC
1s
100ms
10ms
1ms
V = -4.5V
SINGLE PULSE
R = See Note 1b
T = 25°C
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PDF描述 |
|---|---|
| FDC6322 | Dual N & P Channel , Digital FET |
| FDC6322C | Dual N & P Channel , Digital FET |
| FDC6323 | Integrated Load Switch |
| FDC6323L | Integrated Load Switch |
| FDC6324 | Integrated Load Switch |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6321C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SUPERSOT-6 |
| FDC6321C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6322 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P Channel , Digital FET |
| FDC6322C | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6322C_Q | 功能描述:MOSFET SSOT-6 COMP N-P-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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