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參數資料
| 型號： | FDC6420 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 20V N & P-Channel PowerTrench MOSFETs |
| 中文描述： | 20V的? |
| 文件頁數： | 3/8頁 |
| 文件大小： | 102K |
| 代理商： | FDC6420 |
FDC6420C Rev C(W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Q1
Q2
0.8
–0.8
1.2
–1.2
A
V
SD
Q1
Q2
V
GS
= 0 V, I
S
= 0.8 A
V
GS
= 0 V, I
S
= 0.8 A
(Note 2)
0.7
–0.8
Drain–Source Diode Forward
Voltage
(Note 2)
V
Notes:
1.
R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 130
°
C/W when
mounted on a 0.125
in
pad of 2 oz.
copper.
b) 140 °C/W when
mounted on a .004 in
2
pad of 2 oz copper
c) 180 C°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDC6420C | 20V N & P-Channel PowerTrench MOSFETs |
| FDC642 | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC642P | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| FDC6432SH | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
| FDC645 | N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6420C | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6420C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6420C_Q | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC642P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC642P_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -20V, -4A, 100m?? |
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