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參數資料
| 型號： | FDC642 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
| 中文描述： | P通道2.5V的指定的PowerTrench MOSFET的⑩ |
| 文件頁數： | 6/8頁 |
| 文件大小： | 269K |
| 代理商： | FDC642 |
P1
A0
D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
13.00
0.059
1.5
512 +0.020/-0.008
0.795
4.00
0.331 +0.059/-0.000
0.567
0.311 – 0.429
See detail AA
Dim A
max
13" Diameter Option
7" Diameter Option
Dim A
Max
See detail AA
W3
W2 max Measured at Hub
W1 Measured at Hub
Dim N
Dim D
min
Dim C
B Min
DETAIL AA
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum component rotation
0.5mm
maximum
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
20 deg maximum
Typical
component
center line
B0
A0
Component Rotation
Sketch A (Side or Front Sectional View)
Component Rotation
User Direction of Feed
SSOT-6 Embossed Carrier Tape
Configuration:
Figure 3.0
SSOT-6 Reel Configuration:
Figure 4.0
Dimensions are in millimeter
Pkg type
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
SSOT-6
(8mm)
3.23
+/-0.10
3.18
+/-0.10
8.0
+/-0.3
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
6.25
min
3.50
+/-0.05
4.0
+/-0.1
4.0
+/-0.1
1.37
+/-0.10
0.255
+/-0.150
5.2
+/-0.3
0.06
+/-0.02
SuperSOT
TM
-6 Tape and Reel Data and Package Dimensions, continued
July 1999, Rev. C
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|---|---|
| FDC642P | P-Channel 2.5V Specified PowerTrench⑩MOSFET |
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| FDC645 | N-Channel PowerTrench MOSFET |
| FDC645N | N-Channel PowerTrench MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6420 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N & P-Channel PowerTrench MOSFETs |
| FDC6420C | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC6420C | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDC6420C_Q | 功能描述:MOSFET 20V/-20V N/P RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC642P | 功能描述:MOSFET SSOT-6 P-CH -20V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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