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參數資料
| 型號： | FDC6432SH |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 12V P-Channel PowerTrench MOSFET, 30V PowerTrench SyncFET |
| 中文描述： | 2400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 199K |
| 代理商： | FDC6432SH |
FDC6432SH Rev B (W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Q
Min
Typ
Max Units
Drain-Source Diode Characteristics
Drain-Source Diode Forward
Voltage
V
SD
V
GS
= 0 V, I
S
= 0.7A, Note 2
V
GS
= 0 V, I
S
= –0.8A, Note 2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
0.6
–0.7
10
24
0.8
–0.5
4
6
700
1200
mV
t
RR
Reverse Recovery Time
ns
I
RM
Maximum Reverse Recovery
Current
A
Q
RR
Reverse Recovery Charge
For Q1:
IF = 2.4A, dIF/dt = 300A/μs
For Q2:
IF = –2.5A, dIF/dt = 100A/μs
nC
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
100°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
175°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC645 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N | 功能描述:MOSFET SSOT-6 N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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