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參數資料
| 型號： | FDC645N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 5.5 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 313K |
| 代理商： | FDC645N |
FDC645N Rev B(W)
Typical Characteristics
0
5
10
15
20
0
0.5
1
1.5
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.0V
2.5V
4.5V
2.0V
V
GS
= 10V
3.5V
0.8
1
1.2
1.4
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.0V
3.5V
6.0V
4.0V
4.5V
5.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 5.5A
V
GS
= 4.5V
0.01
0.02
0.03
0.04
0.05
0.06
0.07
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 3.75 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
5
10
15
20
25
30
1
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
125
o
C
V
DS
= 5V
25
o
C
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC645N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SUPERSOT-6 |
| FDC645N_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench MOSFET |
| FDC645N_F095 | 功能描述:MOSFET 30V 5.5A N-CH POWERTRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC645N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC645N Series 30 V 26 mOhm N-Channel PowerTrench Mosfet - SSOT-6 |
| FDC6506 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
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