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參數資料
| 型號： | FDC6506P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel Logic Level PowerTrench⑩ MOSFET |
| 中文描述： | 1800 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-6 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 204K |
| 代理商： | FDC6506P |
F
FDC6506P Rev. C
Typical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
=-1.8A
V
GS
=-10V
0
2
4
6
8
10
0
1
2
3
4
5
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-
D
,
V
GS
=-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
-3.0V
0.5
1
1.5
2
2.5
0
2
4
6
8
10
-I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
=-4.0V
-4.5V
-5.0V
-6.0V
-7.0V
-10V
0
1
2
3
4
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-
D
,
V
DS
=-5V
T
J
=-55
o
C
25
o
C
125
o
0.001
0.01
0.1
1
10
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, BODY DIODE VOLTAGE (V)
-
S
,
V
GS
=0
T
J
=125
o
C
25
o
C
-55
o
C
0.1
0.2
0.3
0.4
0.5
2
3
4
5
6
7
8
9
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
T
J
=125
o
C
25
o
C
I
D
=-1.0A
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDC6506P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6 |
| FDC6506P_Q | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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