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參數(shù)資料
| 型號： | FDC653 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 70K |
| 代理商： | FDC653 |
FDC653N Rev.B
Figure 10. Single Pulse Maximum Power
Dissipation.
0.1
0.3
1
3
10
30
50
100
200
500
1000
V , DRAIN TO SOURCE VOLTAGE (V)
C
f = 1 MHz
V = 0V
C ss
C s
C s
Figure 8. Capacitance Characteristics
.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical And Thermal Characteristics
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q , GATE CHARGE (nC)
V
G
I = 5.0A
D
V = 5V
10V
15V
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
I
D
RDS(ON) LIMIT
V = 10V
SINGLE PULSE
R = See Note 1b
T = 25°C
JA
1s
DC
100ms
100us
10ms
1ms
0.01
0.1
1
10
100
300
0
1
2
3
4
5
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R =See note 1b
T = 25°C
A
JA
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.01
0.02
0.05
0.1
0.2
0.5
1
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
r
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1b
T - T = P * R JA
P(pk)
t
1
t
2
Figure 11. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal
response will change depending on the circuit board design.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDC653N | N-Channel Enhancement Mode Field Effect Transistor |
| FDC654P | P-Channel Enhancement Mode Field Effect Transistor |
| FDC655BN | Single N-Channel, Logic Level, PowerTrench MOSFET |
| FDC655AN | Single N-Channel, Logic Level, PowerTrenchTM MOSFET |
| FDC6561AN | Dual N-Channel Logic Level PowerTrenchTM MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC653N | 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653N_F095 | 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC653N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6 |
| FDC654P | 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC654P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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