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參數(shù)資料
| 型號： | FDC796N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12.5 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | FLMP, SUPERSOT-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 185K |
| 代理商： | FDC796N |
February 2004
2004 Fairchild Semiconductor Corporation
FDC796N Rev D (W)
FDC796N
30V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS(ON)
and fast switching speed.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Power management
Load switch
Features
12.5 A, 30 V.
R
DS(ON)
= 9 m
@ V
GS
= 10 V
R
DS(ON)
= 12 m
@ V
GS
= 4.5 V
High performance trench technology for extremely
low R
DS(ON)
Low gate charge
High power and current handling capability
Fast switching speed.
SuperSOT-6
TM
FLMP
S
S
S
G
S
S
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Ratings
30
±
20
12.5
40
2
1.1
55 to +150
Units
V
A
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Maximum Power Dissipation
(Note 1a)
– Pulsed
(Note 1a)
W
(Note 1b)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
60
111
0.5
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.796
FDC796N
7’’
8mm
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDC796N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDC796N_F077 | 功能描述:MOSFET 30V N-Ch PwrTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC796N_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDC8268P WAF | 制造商:SMSC 功能描述: |
| FDC855N | 功能描述:MOSFET 30V Single NCh Logic Level PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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