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參數資料
| 型號： | FDD068AN03 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз |
| 中文描述： | N溝道的PowerTrench？？ MOSFET的30V的，35A條，6.8mз |
| 文件頁數： | 2/11頁 |
| 文件大?。?/td> | 298K |
| 代理商： | FDD068AN03 |
2003 Fairchild Semiconductor Corporation
FDD068AN03L / FDU068AN03L Rev. B1
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
V
GS(TH)
Dynamic Characteristics
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 0.43mH, I
AS
= 28A.
Device Marking
FDD068AN03L
FDU068AN03L
Device
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
FDD068AN03L
FDU068AN03L
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 35A, V
GS
= 10V
I
D
= 35A, V
GS
= 4.5V
I
D
= 35A, V
GS
= 10V,
T
J
= 175
o
C
1.2
-
-
-
2.5
V
r
DS(ON)
Drain to Source On Resistance
0.0047 0.0057
0.0057 0.0068
-
0.0075 0.0092
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
-
-
2525
490
300
2.1
46
24
2.3
6.9
4.6
9.8
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 35A
I
g
= 1.0mA
60
32
3.0
-
-
-
V
DD
= 15V, I
D
= 35A
V
GS
= 4.5V, R
GS
= 6.2
-
-
-
-
-
-
-
283
-
-
-
-
137
ns
ns
ns
ns
ns
ns
18
171
31
61
-
V
SD
Source to Drain Diode Voltage
I
SD
= 35A
I
SD
= 15A
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
I
SD
= 35A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
27
12
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數 |
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| FDD068AN03L | 功能描述:MOSFET N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD10005 | 制造商:ELMEC 功能描述: |
| FDD107AN06LA0 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD107AN06LA0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD10AN06_F085_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 10.5m?? |
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