- 您現在的位置：買賣IC網 > PDF目錄375785 > FDD068AN03L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз PDF資料下載
參數資料
| 型號： | FDD068AN03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз |
| 中文描述： | 17 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/11頁 |
| 文件大小： | 298K |
| 代理商： | FDD068AN03L |
2003 Fairchild Semiconductor Corporation
December 2003
FDD068AN03L / FDU068AN03L Rev. B1
F
FDD068AN03L / FDU068AN03L
N-Channel PowerTrench
MOSFET
30V, 35A, 6.8m
Features
r
DS(ON)
= 5.7m
(Typ.), V
GS
= 4.5V, I
D
= 35A
Q
g(5)
= 24nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Applications
12V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
ABS
DC-DC Converters
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 154
o
C, V
GS
= 10V)
Continuous (T
C
< 150
o
C, V
GS
= 4.5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
35
35
17
A
A
A
A
Figure 4
168
80
0.53
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.88
100
52
o
C/W
o
C/W
o
C/W
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
相關PDF資料 |
PDF描述 |
|---|---|
| FDD068AN03 | N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз |
| FDU2572 | N-Channel PowerTrench MOSFET 150V, 29A, 54mз |
| FDD2572 | N-Channel PowerTrench MOSFET 150V, 29A, 54mз |
| FDU3706 | 30V N-Channel PowerTrench MOSFET |
| FDD3706 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD10005 | 制造商:ELMEC 功能描述: |
| FDD107AN06LA0 | 功能描述:MOSFET 60V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD107AN06LA0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDD10AN06_F085_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 60V, 50A, 10.5m?? |
| FDD10AN06A0 | 功能描述:MOSFET 60V 50a .15 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。