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參數資料
| 型號： | FDD2670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | XTAL MTL T/H HC49/US |
| 中文描述： | 3.6 A, 200 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 95K |
| 代理商： | FDD2670 |
November 2001
2001 Fairchild Semiconductor Corporation
FDD2670 Rev C1(W)
FDD2670
200V N-Channel PowerTrench
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
N-Channel
MOSFET
has
been
designed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
3.6 A, 200 V.
R
DS(ON)
= 130 m
@ V
GS
= 10 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
G
S
D
TO-252
S
D
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
Drain Current
– Pulsed
Maximum Power Dissipation @ T
C
= 25
°
C
dv/dt
Peak Diode Recovery dv/dt
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
200
±
20
3.6
20
70
3.2
1.3
3.2
-55 to +150
Units
V
V
A
(Note 1)
(Note 1)
@ T
A
= 25
°
C
@ T
A
= 25
°
C
(Note 1a)
P
D
(Note 1b)
W
(Note 3)
V/ns
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
1.8
96
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD2670
FDD2670
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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相關代理商/技術參數 |
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| FDD3 | 制造商:Cooper Crouse-Hinds 功能描述: |
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