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參數資料
| 型號： | FDD3N40TF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 400V N-Channel MOSFET |
| 中文描述： | 2 A, 400 V, 3.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | LEAD FREE, DPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 735K |
| 代理商： | FDD3N40TF |
2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. A
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDD3N40 / FDU3N40
400V N-Channel MOSFET
Features
2A, 400V, R
DS(on)
= 3.4
@V
GS
= 10 V
Low gate charge ( typical 4.5 nC)
Low C
rss
( typical 3.7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
D
G
S
I-PAK
FDU Series
D-PAK
FDD Series
G
S
D
G
S
D
Symbol
Parameter
FDD3N40 / FDU3N40
Unit
V
DSS
I
D
Drain-Source Voltage
400
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
2.0
1.25
8.0
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
46
mJ
Avalanche Current
(Note 1)
2
A
Repetitive Avalanche Energy
(Note 1)
3
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
30
0.24
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
Typ
Max
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
--
4.2
°
C/W
Thermal Resistance, Case-to-Sink Typ.
--
110
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD3N40TM | 功能描述:MOSFET 400V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD3N50NZ | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET 500V, 2.5A, 2.5??? |
| FDD3N50NZTM | 功能描述:MOSFET UNIFET2 500V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD4141 | 功能描述:MOSFET -40V P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD4141_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel PowerTrench?? MOSFET -40V, -50A, 12.3m?? |
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