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參數資料
| 型號： | FDD4141 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.5 to 3.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD |
| 中文描述： | 50 A, 40 V, 0.0187 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, TO-252, D-PAK-3 |
| 文件頁數： | 4/6頁 |
| 文件大小： | 244K |
| 代理商： | FDD4141 |
F
www.fairchildsemi.com
4
2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Figure 7.
0
8
16
24
32
40
0
2
4
6
8
10
I
D
= -12.7A
V
DD
= -20V
V
DD
= -10V
-
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= -15V
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
10000
40
f = 1MHz
V
GS
= 0V
C
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
1
10
100
1000
1
10
30
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
-
I
A
,
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Case Temperature
25
50
75
100
125
150
0
10
20
30
40
50
60
Limited by Package
R
θ
JC
= 1.8
o
C/W
V
GS
= -4.5V
V
GS
= -10V
-
D
,
D
T
C
,
CASE TEMPERATURE
(
o
C
)
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
100
0.1
1
10
100
DC
10ms
1ms
100us
THIS AREA IS
LIMITED BY r
DS(on)
200
SINGLE PULSE
T
J
= MAX RATED
R
θ
JC
= 1.8
o
C/W
T
C
=
25
o
C
-
D
,
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 12.
T
C
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
150
------125
T
C
–
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
100
1000
10000
V
GS
= -10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
50
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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