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參數資料
| 型號： | FDD5614P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V P-Channel PowerTrench MOSFET |
| 中文描述： | 15 A, 60 V, 0.1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | TO-252, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 81K |
| 代理商： | FDD5614P |
February 2001
2001 Fairchild Semiconductor Corporation
FDD5614P Rev C(W)
FDD5614P
60V P-Channel PowerTrench
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
DC/DC converter
Power management
Load switch
Features
–15 A, –60 V. R
DS(ON)
= 100 m
@ V
GS
= –10 V
R
DS(ON)
= 130 m
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
–60
±
20
–
15
–
45
42
3.8
1.6
–
55 to +175
Units
V
V
A
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
3.5
40
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD5614P
FDD5614P
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK SINGLE PCH:ROHS COMPLIANT |
| FDD5614P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P D-PAK |
| FDD5614P_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V P-Channel PowerTrench㈢ MOSFET |
| FDD5614P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDD5614P Series 60 V 100 mOhm P-Channel PowerTrench Mosfet TO-252 |
| FDD5670 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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