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參數資料
| 型號： | FDD5670 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V N-Channel PowerTrenchTM MOSFET |
| 中文描述： | 21 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 5/5頁 |
| 文件大小： | 106K |
| 代理商： | FDD5670 |
TRADEMARKS
ACEx
CoolFET
CROSSVOLT
E
2
CMOS
TM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
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failure to perform when properly used in accordance
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Definition
Advance Information
Preliminary
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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SyncFET
TinyLogic
UHC
VCX
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
Rev. D
相關PDF資料 |
PDF描述 |
|---|---|
| FDD5680 | N-Channel, PowerTrench⑩ MOSFET |
| FDD5690 | 60V N-Channel PowerTrench⑩ MOSFET |
| FDD5810 | N-Channel PowerTrench㈢ MOSFET 60V, 35A, 27mOhm |
| FDD6035 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6035AL | N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD5670_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench?? MOSFET |
| FDD5680 | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5690 | 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD5690 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD5690_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET |
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