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參數資料
| 型號： | FDD6637_06 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 35V P-Channel PowerTrench MOSFET |
| 中文描述： | 35V的P溝道PowerTrench MOSFET的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 126K |
| 代理商： | FDD6637_06 |
FDD6637
35V P-Channel PowerTrench
ò
MOSFET
August 2006
2006 Fairchild Semiconductor Corporation
FDD6637 Rev C2(W)
www.fairchildsemi.com
General Description
This P-Channel MOSFET has been produced using
Fairchild Semiconductor’s proprietary PowerTrench
technology to deliver low Rdson and optimized Bvdss
capability to offer superior performance benefit in the
applications.
Applications
Inverter
Power Supplies
Features
–55 A, –35 V R
DS(ON)
= 11.6 m
@ V
GS
= –10 V
R
DS(ON)
= 18 m
@ V
GS
= –4.5 V
High performance trench technology for extremely
low R
DS(ON)
RoHS Compliant
G
S
D
D-PAK
(TO-252)
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
DS(Avalanche)
Drain-Source Avalanche Voltage (maximum)
V
GSS
Gate-Source Voltage
Continuous Drain Current @T
C
=25°C
(Note 3)
Power Dissipation
P
D
Ratings
–35
–40
±
25
–55
–13
–100
57
Units
V
V
V
A
(Note 4)
@T
A
=25°C
(Note 1a)
Pulsed
@T
C
=25°C
(Note 3)
@T
A
=25°C
@T
A
=25°C
I
D
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
(Note 1a)
(Note 1b)
3.1
1.3
W
T
J
, T
STG
–55 to +150
°
C
(Note 1)
2.2
40
(Note 1a)
(Note 1b)
96
°
C/W
Package
Reel Size
Tape width
Quantity
FDD6637
FDD6637
D-PAK (TO-252)
13’’
12mm
2500 units
S
G
D
F
ò
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| FDD6637 | 35V P-Channel PowerTrench-R MOSFET |
| FDD6670S | 20 AMP MINIATURE POWER RELAY |
| FDD6670 | N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670AL | 30V N-Channel PowerTrench MOSFET |
| FDD6670A | N-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6644 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6644S | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6670 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrench MOSFET |
| FDD6670A | 功能描述:MOSFET 30V N-Ch PowerTrench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6670A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 76A TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 76A, TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:3 ;RoHS Compliant: Yes |
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