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參數資料
| 型號： | FDD6672A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | null30V N-Channel PowerTrench MOSFET |
| 中文描述： | 65 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 425K |
| 代理商： | FDD6672A |
FDD6672A Rev B(W)
Typical Characteristics
0
10
20
30
40
50
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
3.5V
2.0V
V
GS
= 4.5V
2.5V
3.0V
0.9
1.1
1.3
1.5
0
10
20
I
D
, DRAIN CURRENT (A)
30
40
50
60
R
D
,
D
V
GS
= 2.5V
3.0V
3.5V
4.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 15A
V
GS
= 10V
0
0.005
0.01
0.015
0.02
0.025
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 6 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
15
30
45
60
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= 125
o
C
-55
o
C
V
DS
= 5V
25
o
C
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
F
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| FDD6676A | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS | 30V N-Channel PowerTrench SyncFET |
| FDD6676AS_NL | 30V N-Channel PowerTrench SyncFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6672A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK |
| FDD6672A_01 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench MOSFET |
| FDD6676 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6676A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:30V N-Channel PowerTrench SyncFET |
| FDD6676AS | 功能描述:MOSFET 30V N-CH DPAK POWR TRENCH SYNCFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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