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參數資料
| 型號： | FDD6690S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 40A條（丁）|對252AA |
| 文件頁數： | 1/7頁 |
| 文件大小： | 136K |
| 代理商： | FDD6690S |
September 2001
FDD6690S
30V N
-
Channel PowerTrench
SyncFET
2001 Fairchild Semiconductor Corporation
FDD6690S Rev C (W)
General Description
The FDD6690S is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDD6690S includes
an
integrated
Schottky
monolithic SyncFET technology. The performance of
the FDD6690S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDD6690A in parallel with a Schottky diode.
diode
using
Fairchild’s
Applications
DC/DC converter
Motor Drives
Features
40 A, 30 V
R
DS(ON)
= 16 m
@ V
GS
= 10 V
R
DS(ON)
= 24 m
@ V
GS
= 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
30
±
20
40
100
50
2.8
1.3
–55 to +150
Units
V
V
A
W
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
P
D
(Note 1b)
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
2.5
45
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
FDD6690S
FDD6690S
Reel Size
13’’
Tape width
16mm
Quantity
2500 units
F
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