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參數資料
| 型號： | FDD6N50FTF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 5.5A, 1.15ヘ |
| 中文描述： | 5.5 A, 500 V, 1.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 324K |
| 代理商： | FDD6N50FTF |
tm
June 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDD6N50F / FDU6N50F Rev. A
www.fairchildsemi.com
1
TM
FDD6N50F / FDU6N50F
N-Channel MOSFET
500V, 5.5A, 1.15
Ω
Features
R
DS(on)
= 1.0
Ω
( Typ.)@ V
GS
= 10V, I
D
= 2.75A
Low gate charge ( Typ. 15nC)
Low C
rss
( Typ. 6.3pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
G
S
D
D-PAK
FDD Series
I-PAK
FDU Series
G
D S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
500
±30
5.5
2.4
22
270
5.5
8.9
4.5
89
0.71
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (T
C
= 25
o
C)
I
D
A
-Continuous (T
C
= 100
o
C)
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
JA
*When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction to Case
1.4
o
C/W
Thermal Resistance, Junction to Ambient
83
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD6N50FTM | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50RTF | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6N50TF | 功能描述:MOSFET 500V N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD6N50TF_WS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDD6N50TM | 功能描述:MOSFET 30V/16V 9.5/12MO NCH SINGLE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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