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參數資料
型號: FDD8424H
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N & P-Channel PowerTrench㈢ MOSFET
中文描述: 20 A, 40 V, 0.024 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, TO-252, DPAK-4
文件頁數: 1/12頁
文件大小: 591K
代理商: FDD8424H
tm
March 2007
F
2007 Fairchild Semiconductor Corporation
FDD8424H Rev.C
www.fairchildsemi.com
1
FDD8424H
Dual N & P-Channel PowerTrench
MOSFET
N-Channel: 40V, 20A, 24m
P-Channel:
-40V, -20A, 54m
Features
Q1: N-Channel
Max r
DS(on)
= 24m
at V
GS
= 10V, I
D
= 9.0A
Max r
DS(on)
= 30m
at V
GS
= 4.5V, I
D
= 7.0A
Q2: P-Channel
Max r
DS(on)
= 54m
at V
GS
= -10V, I
D
= -6.5A
Max r
DS(on)
= 70m
at V
GS
= -4.5V, I
D
= -5.6A
Fast switching speed
RoHS Compliant
General Description
These dual N and P-Channel enhancement mode Power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
Inverter
H-Bridge
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Q1
40
±20
20
26
9.0
55
30
Q2
-40
±20
-20
-20
-6.5
-40
35
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package Limited)
- Continuous (Silicon Limited) T
C
= 25°C
- Continuous T
A
= 25°C
- Pulsed
Power Dissipation for Single Operation T
C
= 25°C (Note 1)
T
A
= 25°C (Note 1a)
T
A
= 25°C (Note 1b)
Single Pulse Avalanche Energy (Note 3)
Operating and Storage Junction Temperature Range
I
D
A
P
D
W
3.1
1.3
E
AS
T
J
, T
STG
29
33
mJ
°C
-55 to +150
R
θ
JC
R
θ
JC
Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1)
Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1)
4.1
3.5
°C/W
Device Marking
FDD8424H
Device
FDD8424H
Package
TO-252-4L
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Dual DPAK 4L
D1/D2
G2
S2
G1
S1
N-Channel
P-Channel
D1
D2
S1
G1
S2
G2
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相關代理商/技術參數
參數描述
FDD8424H_11 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8424H_F085 功能描述:MOSFET PT2 P-Channel and PT4 N-channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A 功能描述:MOSFET Dual N&PCH PwrTrench +/- 40V,20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD8424H_F085A_13 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel PowerTrench?? MOSFET N-Channel: 40V, 20A, 24m?? P-Channel: -40V, -20A, 54m??
FDD8426H 功能描述:MOSFET Dual N & P-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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