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參數資料
| 型號： | FDD8770 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench㈢ MOSFET |
| 中文描述： | 35 A, 25 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | ROHS COMPLIANT, DPAK-3 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 313K |
| 代理商： | FDD8770 |
March 2006
F
2006 Fairchild Semiconductor Corporation
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com
1
FDD8770/FDU8770
N-Channel PowerTrench
MOSFET
25V, 35A, 4.0m
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
Features
Max r
DS(on)
=
4.0m
at V
GS
= 10V, I
D
= 35A
Max r
DS(on)
=
5.5m
at V
GS
= 4.5V, I
D
= 35A
Low gate charge: Q
g(10)
= 52nC(Typ), V
GS
= 10V
Low gate resistance
RoHS Compliant
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
25
±20
35
210
407
113
115
-55 to 175
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
-Continuous (Die Limited)
-Pulsed (Note 1)
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
Operating and Storage Temperature
I
D
A
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance, Junction to Case TO-252,TO-251
1.3
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
2
copper pad area
100
52
Device Marking
FDD8770
FDU8770
FDU8770
Device
FDD8770
FDU8770
FDU8770_F071
Package
TO-252AA
TO-251AA
TO-251AA
Reel Size
13’’
N/A(Tube)
N/A(Tube)
Tape Width
12mm
N/A
N/A
Quantity
2500 units
75 units
75 units
L
E
A
D
F
R
E
E
M
E
T
A
L
T
I
O
N
MP
I
D
G
S
Short Lead I-PAK
I-PAK
(TO-251AA)
G D S
G
D
S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDD8778 | 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8780 | 功能描述:MOSFET 25V N-Channel PwrTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8782 | 功能描述:MOSFET 25V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8796 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDD8870 | 功能描述:MOSFET 30V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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