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參數(shù)資料
| 型號(hào)： | FDFC2P100 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm |
| 中文描述： | 3 A, 20 V, 0.252 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SUPERSOT, 6 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 301K |
| 代理商： | FDFC2P100 |
F
M
FDFC2P100 Rev.C (W)
www.fairchildsemi.com
2
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250
μ
A, V
GS
= 0V
-20
V
I
D
= -250
μ
A, referenced to 25°C
-12
mV/°
C
V
GS
= 0V, V
DS
= -16V
V
GS
= ±12V, V
DS
= 0V
-1
μ
A
μ
A
±100
On Characteristics
V
GS(th)
V
GS(th)
T
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μ
A
-0.6
-0.9
-1.5
V
I
D
= -250
μ
A, referenced to 25°C
3
mV/°C
r
DS(on)
Drain to Source On-Resistance
V
GS
= -4.5V, I
D
= -3.0A
V
GS
= -2.5V, I
D
= -2.2A
V
GS
= -4.5V, I
D
= -3.0A, T
J
= 125°C
V
DS
= -5V, I
D
= -3.0A
95
150
130
5.4
150
200
252
m
g
FS
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= -10V, V
GS
= 0V,
f = 1MHz
335
80
40
6
445
105
60
pF
pF
pF
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at -10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
= -10V, I
D
= -3.0A
V
GS
= -4.5V, R
GEN
= 6
9
11
12
4
3.4
0.9
1.0
16
20
22
8
4.7
ns
ns
ns
ns
nC
nC
nC
V
GS
= 0V to -10V
V
DD
= -4.5V
I
D
= -3.0A
Drain-Source Diode Characteristics
I
S
V
SD
t
rr
Q
rr
Maximum Continuous Drain tio Source Diode forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-1.2
-1.2
A
V
ns
nC
V
GS
= 0V, I
S
= -1.2A (Note 2)
-0.8
17
5
I
F
= -3.0A, di/dt = 100A/
μ
s
Schottky Diode Characteristics
I
R
Reverse Leakage
V
R
= 20V
T
J
= 25°C
T
J
= 100C
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
T
J
= 100°C
T
J
= 25°C
T
J
= 100°C
26
2.7
23
2.5
0.31
0.24
0.37
0.3
400
20
200
10
0.4
0.35
0.45
0.42
μ
A
mA
μ
A
mA
V
R
= 10V
V
F
Forward Voltage
I
F
= 500mA
V
I
F
= 1A
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