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參數資料
| 型號： | FDG312P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-Channel 2.5V Specified PowerTrench⑩ MOSFET |
| 中文描述： | 1200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 206K |
| 代理商： | FDG312P |
F
FDG312P Rev. C
FDG312P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
February 1999
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
-20
±
8
-1.2
-6
0.75
0.55
0.48
V
V
A
- Continuous
- Pulsed
(Note 1)
Power Dissipation for Single Operation
(Note 1b)
(Note 1a)
W
P
D
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
260
°
C/W
Package Outlines and Ordering Information
Device Marking
.
12
Device
FDG312P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
This P-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
Load switch
Battery protection
Power management
Features
-1.2 A, -20 V. R
DS(on)
= 0.18
@ V
GS
= -4.5 V
R
DS(on)
= 0.25
@ V
GS
= -2.5 V.
Low gate charge (3.3 nC typical).
High performance trench technology for extremely
low R
DS(ON)
.
Compact industry standard SC70-6 surface mount
package.
3
5
6
4
1
2
SC70-6
D
S
DG
D
D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG312P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG313N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG313N_D87Z | 功能描述:MOSFET SC70-6 N-CH 25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG314P | 功能描述:MOSFET SC70-6 P-CH -25V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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