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參數資料
| 型號： | FDG361N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 68PF 1KVDC U2J 1206 |
| 中文描述： | 600 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 80K |
| 代理商： | FDG361N |
August 2001
2001 Fairchild Semiconductor Corporation
FDG361N Rev C(W)
FDG361N
N-Channel 100V Specified PowerTrench
MOSFET
General Description
These N-Channel 100V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
Load switch
Battery protection
Power management
Features
0.6 A, 100 V.
R
DS(ON)
= 500 m
@ V
GS
= 10 V
R
DS(ON)
= 550 m
@ V
GS
= 6.0 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
SC70-6
D
D
G
D
D
S
Pin 1
6
5
4
1
2
3
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
100
±
20
0.6
2.0
0.42
0.38
55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
333
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
.61
FDG361N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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