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參數資料
| 型號： | FDG6316 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | P溝道MOSFET的1.8指定的PowerTrench |
| 文件頁數： | 1/5頁 |
| 文件大小： | 149K |
| 代理商： | FDG6316 |
December 2001
2001 Fairchild Semiconductor Corporation
FDG6316P Rev D W)
FDG6316P
P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Battery management
Load switch
Features
–0.7 A, –12 V.
R
DS(ON)
= 270 m
@ V
GS
= –4.5 V
R
DS(ON)
= 360 m
@ V
GS
= –2.5 V
R
DS(ON)
= 650 m
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
S
G
D
D
G
S
Pin 1
SC70-6
S
G
D
D
G
S
6 or 3
5 or 2
4 or 1
1 or 4
2 or 5
3 or 6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
–12
±
8
–0.7
–1.8
0.3
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1)
– Pulsed
(Note 1)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
.16
FDG6316P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDG6316P | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6316P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDG6316P_G | 制造商:Fairchild 功能描述:DUAL MOSFEL -12V/0.7A , SC70 |
| FDG6316P_Q | 功能描述:MOSFET P-Ch PowerTrench Specified 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDG6317NZ | 功能描述:MOSFET Dual 20V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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