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參數資料
| 型號： | FDH038AN08A1 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 22 A, 75 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 214K |
| 代理商： | FDH038AN08A1 |
2003 Fairchild Semiconductor Corporation
February 2003
FDH038AN08A1 Rev A
F
FDH038AN08A1
N-Channel PowerTrench
MOSFET
75V, 80A, 3.8m
Features
r
DS(ON)
= 3.5m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g
(tot) = 125nC (Typ.), V
GS
= 10V
Internal Gate Resistor, Rg = 20
(Typ.)
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Formerly developmental type 82690
Applications
42V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
Electronic Valve Train Systems
DC-DC converters and Off-line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
75
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 158
o
C, V
GS
= 10V)
Continuous (T
A
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 30
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
22
A
A
A
J
W
Figure 4
1.17
450
3.0
-55 to 175
E
AS
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
0.33
30
o
C/W
o
C/W
D
G
S
GATE
DRAIN
SOURCE
TO-247
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDH038AN08A1_Q | 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDH040C48/BK | 制造商:Thomas & Betts 功能描述:HAZFLDH3,400W,M.H.,480V,BALST KIT |
| FDH047AN08A0 | 功能描述:MOSFET N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDH055N15A | 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDH1000 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Conductance Switching Diodes |
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