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參數資料
| 型號： | FDH3632 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 1/11頁 |
| 文件大小： | 310K |
| 代理商： | FDH3632 |
2004 Fairchild Semiconductor Corporation
November 2004
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C1
F
FDB3632 / FDP3632 / FDI3632 / FDH3632
N-Channel PowerTrench
MOSFET
100V, 80A, 9m
Features
r
DS(ON)
= 7.5m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g
(tot) = 84nC (Typ.), V
GS
= 10V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Applications
DC/DC converters and Off-Line UPS
Distributed Power Architectures and VRMs
Primary Switch for 24V and 48V Systems
High Voltage Synchronous Rectifier
Direct Injection / Diesel Injection Systems
42V Automotive Load Control
Electronic Valve Train Systems
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
100
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 111
o
C, V
GS
= 10V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
80
12
A
A
A
Figure 4
393
310
2.07
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
Thermal Resistance Junction to Case TO-220, TO-263, TO-262,
TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
Thermal Resistance Junction to Ambient TO-247 (Note 2)
0.48
o
C/W
R
θ
JA
R
θ
JA
R
θ
JA
62
43
30
o
C/W
o
C/W
o
C/W
S
G
D
TO-263AB
FDB SERIES
TO-220AB
FDP SERIES
DRAIN
(FLANGE)
D
G
G
S
S
DRAIN
(FLANGE)
DRAIN
(FLANGE)
D
S
G
TO-262AB
FDI SERIES
SDG
DRAIN
TO-247
FDH SERIES
相關PDF資料 |
PDF描述 |
|---|---|
| FDH444 | High Voltage General PurPose Diodes |
| FDH400 | High Voltage General PurPose Diodes |
| FDLL400 | High Voltage General PurPose Diodes |
| FDLL444 | High Voltage General PurPose Diodes |
| FDH44N50 | 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDH3632 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 80A, TO-247 |
| FDH400 | 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:RECT DIODE 0.2A150V DO35; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns ;RoHS Compliant: Yes |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:SIGNAL DIODE 制造商:Fairchild Semiconductor Corporation 功能描述:SMALL SIGNAL DIODE 200V 200mA DO-35 |
| FDH400_97 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:High Voltage General Purpose Diode |
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