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參數資料
| 型號： | FDI12N50TU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
| 中文描述： | 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, I2PAK-3 |
| 文件頁數： | 4/9頁 |
| 文件大?。?/td> | 311K |
| 代理商： | FDI12N50TU |
F
FDB12N50
TM
Rev. A
1
www.fairchildsemi.com
4
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
*Notes:
1. V
GS
= 0V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature
[
o
C
]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. V
GS
= 10V
2. I
D
= 6A
R
D
,
D
T
J
, Junction Temperature
[
o
C
]
25
50
T
C
, Case Temperature
[
o
C
]
75
100
125
150
0
2
4
6
8
10
12
14
I
D
,
1
10
100
0.01
0.1
1
10
100
20
μ
s
100
μ
s
1ms
10ms
I
D
,
V
DS
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DS(on)
*Notes:
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
800
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
1E-3
0.01
0.1
1
0.01
Single pulse
0.1
0.2
0.05
0.02
*Notes:
1. Z
θ
JC
(t) = 0.75
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.5
T
[
Z
θ
J
]
Rectangular Pulse Duration [sec]
5
t
1
P
DM
t
2
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