欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: FDJ127P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel -1.8 Vgs Specified PowerTrench MOSFET
中文描述: 4.1 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: SC-75, 6 PIN
文件頁數: 1/5頁
文件大小: 172K
代理商: FDJ127P
July 2004
2004 Fairchild Semiconductor Corporation
FDJ127P Rev B2 (W)
FDJ127P
P-Channel -1.8 Vgs Specified PowerTrench
MOSFET
General Description
This P-Channel -1.8V specified MOSFET uses
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
Applications
Battery management
Load switch
Features
–4.1 A, –20 V.
R
DS(ON)
= 60 m
@ V
GS
= –4.5 V
R
DS(ON)
= 85 m
@ V
GS
= –2.5 V
R
DS(ON)
= 133 m
@ V
GS
= –1.8 V
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC75-6 surface mount
package
S
S
S
S
S
G
SC75-6 FLMP
3
2
1
4
5
6
Bottom Drain
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Parameter
Ratings
–20
±
8
–4.1
–16
1.6
–55 to +150
Units
V
V
A
W
°
C
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1)
– Pulsed
(Note 1)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
.C
FDJ127P
Note 1)
77
°
C/W
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關PDF資料
PDF描述
FDJ128N N-Channel 2.5 Vgs Specified PowerTrench MOSFET
FDJ129 P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDJ129P P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDLL300A High Conductance Low Leakage Diode
FDLL3595 High Conductance, Low Leakage Diode
相關代理商/技術參數
參數描述
FDJ128N 功能描述:MOSFET N-Ch PowerTrench 2.5Vgs Specified RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ128N_F077 功能描述:MOSFET N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ129 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
FDJ129P 功能描述:MOSFET P-Ch -2.5Vgs Spec Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDJ129P_07 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel -2.5 Vgs Specified PowerTrench MOSFET
主站蜘蛛池模板: 丰镇市| 社旗县| 泰兴市| 额敏县| 奇台县| 阿荣旗| 禹城市| 德格县| 大冶市| 民权县| 栾川县| 开封市| 延津县| 高邑县| 金塔县| 博白县| 确山县| 汾西县| 斗六市| 崇左市| 漳州市| 鱼台县| 东宁县| 隆子县| 桐乡市| 清镇市| 宁都县| 麻江县| 大城县| 沈丘县| 巫溪县| 伊宁市| 报价| 朝阳县| 光山县| 芜湖市| 勃利县| 定州市| 裕民县| 大关县| 同仁县|