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參數(shù)資料
| 型號： | FDMA291P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Single P-Channel 1.8V Specified PowerTrench MOSFET |
| 中文描述： | 6600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE, ROHS COMPLIANT, MO-229, MICROFET-6 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 132K |
| 代理商： | FDMA291P |
May 2006
2006 Fairchild Semiconductor Corporation
FDMA291P Rev B (W)
FDMA291P
Single P-Channel 1.8V Specified PowerTrench
MOSFET
General Description
This device is designed specifically for battery charge
or load switching in cellular handset and other ultra-
portable applications. It features a MOSFET with low
on-state resistance.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
linear mode applications.
Features
–6.6 A, –20V. r
DS(ON)
= 42 m
@ V
GS
= –4.5V
r
DS(ON)
= 58 m
@ V
GS
= –2.5V
r
DS(ON)
= 98 m
@ V
GS
= –1.8V
Low profile – 0.8 mm maximum – in the new package
MicroFET 2x2 mm
MicroFET 2x2
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Drain Current – Continuous
I
D
– Pulsed
Power Dissipation for Single Operation
P
D
(Note 1b)
Ratings
–20
±
8
–6.6
–24
2.4
0.9
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
145
(Note 1b)
°
C/W
Package Marking and Ordering Information
Device Marking
Device
291
FDMA291P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
Pin 1
Source
Drain
3
2
1
4
5
6
Bottom Drain Contact
D
D
D
D
G
S
May 2006
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相關代理商/技術參數(shù) |
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|---|---|
| FDMA291P_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel 1.8V Specified PowerTrench㈢ MOSFET |
| FDMA2P857 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDMA3023PZ | 功能描述:MOSFET 30V 2.9A Dual P Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA3027PZ | 功能描述:MOSFET -30V Dual P-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMA3028N | 功能描述:MOSFET 30V Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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