- 您現在的位置：買賣IC網 > PDF目錄375776 > FDMC2523P_07 (Fairchild Semiconductor Corporation) P-Channel QFET -150V, -3A, 1.5ヘ PDF資料下載
參數資料
| 型號： | FDMC2523P_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | P-Channel QFET -150V, -3A, 1.5ヘ |
| 中文描述： | P通道QFET - 150伏，三號甲，1.5ヘ |
| 文件頁數： | 1/7頁 |
| 文件大小： | 177K |
| 代理商： | FDMC2523P_07 |
tm
January 2007
F
2006 Fairchild Semiconductor Corporation
FDMC2523P Rev.C
www.fairchildsemi.com
1
FDMC2523P
P-Channel QFET
-150V, -3A, 1.5
Ω
Features
Max r
DS(on)
= 1.5
Ω
at V
GS
= -10V, I
D
= -1.5A
Low Crss ( typical 10pF)
Fast Switching
Low gate charge ( typical 6.2 nC )
Improved dv / dt capability
RoHS Compliant
General Description
These P-Channel MOSFET enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices
are well suited for low voltage applications such as audio
amplifier, high efficiency switching DC/DC converters, and DC
motor control.
Application
Active Clamp Switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
-150
±30
-3
-1.8
-12
42
-55 to +150
300
-5
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous T
C
= 25°C
-Continuous T
C
= 100°C
-Pulsed
Power Dissipation (Steady State) T
C
= 25°C
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
Peak Diode Recovery dv/dt (Note 2)
I
D
A
P
D
T
J
, T
STG
T
L
dv/dt
W
°
C
°
C
V/ns
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case (Note 1)
Thermal Resistance, Junction to Ambient (Note 1a)
3.0
60
°C/W
Device Marking
FDMC2523P
Device
FDMC2523P
Package
Power 33
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
Power 33
S
S
S
G
D
D
D
D
8
1
7
2
3
4
6
5
1
2
3
4
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Top
相關PDF資料 |
PDF描述 |
|---|---|
| FDMC2523P | P-Channel QFET -150V, -3A, 1.5ohm |
| FDMC2610_07 | N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610 | N-Channel UltraFET Trench MOSFET(200V, 9.5A, 200mohm) |
| FDMC2674_07 | N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mヘ |
| FDMC2674 | N-Channel UltraFET Trench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMC2610 | 功能描述:MOSFET 200V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 200V 9.5A POWER33-8 |
| FDMC2610 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMC2610_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench㈢ MOSFET 200V, 9.5A, 200mヘ |
| FDMC2610_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench?? MOSFET 200V, 9.5A, 200m?? |
發布緊急采購，3分鐘左右您將得到回復。