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參數資料
| 型號： | FDMC8878 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power Trench MOSFET 30V, 16.5A, 14mohm |
| 中文描述： | 9.6 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3.30 X 3.30 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MLP, 8 PIN |
| 文件頁數： | 4/7頁 |
| 文件大小： | 413K |
| 代理商： | FDMC8878 |
F
M
FDMC8878 Rev.
D
www.fairchildsemi.com
4
Figure 7.
0
5
10
15
20
0
2
4
6
8
10
V
DD
= 20V
V
DD
= 15V
V
G
,
Q
g
, GATE CHARGE(nC)
V
DD
= 10V
I
D
= 9.6A
Gate Charge Characteristics
Figure 8.
0.1
1
10
100
1000
f = 1MHz
V
GS
= 0V
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
3000
30
50
Capacitance vs Drain
to Source Voltage
Figure 9.
0.01
0.1
t
AV
, TIME IN AVALANCHE(ms)
1
10
1
10
T
J
= 25
o
C
T
J
= 125
o
C
I
A
,
20
80
Unclamped Inductive
Switching Capability
Figure 10.
Current vs Ambient Temperature
25
50
T
A
, AMBIENT TEMPERATURE
(
75
100
125
o
C
)
150
0
2
4
6
8
10
12
R
θ
JA
= 60
o
C/W
V
GS
= 4.5V
V
GS
= 10V
I
D
,
Maximum Continuous Drain
Figure 11. Forward Bias Safe
Operating Area
0.1
1
10
0.001
0.01
0.1
1
10
1s
10s
DC
100ms
10ms
1ms
100us
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
A
= 25
o
C
I
D
,
VDS, DRAIN to SOURCE VOLTAGE (V)
80
80
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
V
GS
= 10V
SINGLE PULSE
P
(
P
)
,
t, PULSE WIDTH (s)
300
0.5
T
A
= 25
o
C
I = I
25
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
150
----------------------
T
A
–
Single Pulse Maximum
Power Dissipation
Typical Characteristics
T
J
= 25°C unless otherwise noted
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMC8878 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SMD MLP |
| FDMC8878_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench?? MOSFET 30V, 16.5A, 14m |
| FDMC8878_F126 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC8878_F127 | 功能描述:MOSFET 30V N-CHAN 9.6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMC8878_NBSE003 | 功能描述:MOSFET 30V N-CH PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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