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參數資料
| 型號： | FDMS2572_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel UltraFET Trench㈢ MOSFET 150V, 27A, 47mз |
| 中文描述： | N溝道UltraFET海溝㈢MOSFET的為150V，27A條，47mз |
| 文件頁數： | 3/7頁 |
| 文件大小： | 517K |
| 代理商： | FDMS2572_07 |
F
M
FDMS2572 Rev.C2
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
5
0
5
10
15
20
25
30
35
40
V
GS
=
4.5V
V
GS
= 6V
V
GS
= 5.5V
V
GS
=
5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
V
GS
=
10V
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On-Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
8
16
24
32
40
0.8
1.0
1.2
1.4
1.6
1.8
V
GS
=5V
V
GS
=4.5V
V
GS
=5.5V
V
GS
= 6V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
= 10V
Normalized On-Resistance
Figure 3. Normalized On - Resistance
vs Junction Temperature
-75
-50
-25
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
I
D
= 4.5A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
3
4
5
6
7
8
9
10
30
40
50
60
70
80
90
100
110
PULSE DURATION =300
μ
s
DUTY CYCLE = 2.0%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 4.5A
r
D
,
S
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1
2
3
4
5
6
0
10
20
30
40
50
60
T
J
=-55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2.0%MAX
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
Forward Voltage vs Source Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1E-4
1E-3
0.01
0.1
1
10
60
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS2672 | 功能描述:MOSFET 200V N-Ch UltraFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS2672_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UltraFET Trench MOSFET 200V, 20A, 77m |
| FDMS2734 | 功能描述:MOSFET 250V N-Ch UltraFET PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3006SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS3008SDC | 功能描述:MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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