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參數資料
型號: FDMS8660S
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench SyncFET (30V, 40A, 2.4mOHM)
中文描述: 25 A, 30 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, MLP5X6, 8 PIN
文件頁數: 3/8頁
文件大?。?/td> 391K
代理商: FDMS8660S
F
S
T
FDMS8660S Rev.C (W)
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0.0
0.4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.8
1.2
1.6
2.0
0
20
40
60
80
100
120
V
GS
= 6.0V
V
GS
= 3.5V
V
GS
= 4.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
V
GS
=
3.0V
V
GS
=
10V
I
D
,
On Region Characteristics
Figure 2.
vs Drain Current and Gate Voltage
0
20
40
60
80
100
120
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
=
3.0V
V
GS
= 3.5V
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
N
D
I
D
, DRAIN CURRENT(A)
V
GS
=
4.5V
V
GS
= 6V
V
GS
=
10V
Normalized On-Resistance
Figure 3. Normalized On Resistance
vs Junction Temperature
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 25A
V
GS
= 10V
N
T
J
, JUNCTION TEMPERATURE
(
o
C
)
Figure 4.
2
3
4
5
6
7
8
9
10
1
2
3
4
5
6
7
8
I
D
= 25A
T
J
= 25
o
C
T
J
= 125
o
C
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
S
(
m
)
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
0
10
20
30
40
50
60
70
80
90
PULSE DURATION = 300
μ
s
DUTY CYCLE = 2%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
I
D
,
Figure 6.
Forward Voltage vs Source Current
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
1E-3
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
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