- 您現在的位置：買賣IC網 > PDF目錄375777 > FDMS8674 (FAIRCHILD SEMICONDUCTOR CORP) Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP PDF資料下載
參數資料
| 型號： | FDMS8674 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 150; rf (ohm) max: 2.5typ 1.5; Condition IF at rf (mA): 2.0 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.31; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: SFP |
| 中文描述： | 17 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, MO-240AA, POWER 56, 8 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 229K |
| 代理商： | FDMS8674 |
tm
November 2007
2007 Fairchild Semiconductor Corporation
FDMS8674 Rev.B
www.fairchildsemi.com
1
F
FDMS8674
N-Channel PowerTrench
MOSFET
30V, 21A, 5.0m
Features
Max r
DS(on)
= 5.0m
at V
GS
= 10V, I
D
= 17A
Max r
DS(on)
= 8.0m
at V
GS
= 4.5V, I
D
= 14A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8674 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
Computing VR & IMVP Vcore
Secondary Side Synchronous Buck
POL DC-DC Converter
Oring FET / Load Switch
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DS
V
GS
Parameter
Ratings
30
±20
21
94
17
150
181
78
2.5
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) T
C
= 25°C
-Continuous (Silicon limited) T
C
= 25°C
-Continuous T
A
= 25°C (Note 1a)
-Pulsed
Single Pulse Avalanche Energy (Note 3)
Power Dissipation T
C
= 25°C
Power Dissipation T
A
= 25°C (Note 1a)
Operating and Storage Junction Temperature Range
I
D
A
E
AS
mJ
P
D
W
T
J
, T
STG
°C
R
θ
JC
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
1.6
50
°C/W
Device Marking
FDMS8674
Device
FDMS8674
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000units
G
S
S
S
Pin 1
Power 56 (Bottom View)
D
DD
D
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
相關PDF資料 |
PDF描述 |
|---|---|
| FDMS8680 | N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ |
| FDMS8690_07 | N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| FDMS8690 | N-Channel PowerTrench MOSFET |
| FDMS8692 | N-Channel PowerTrench㈢ MOSFET |
| FDMS9600S | Dual N-Channel PowerTrench㈢ MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS8674_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ |
| FDMS8680 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690 | 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8690_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| FDMS8692 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。