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參數資料
| 型號： | FDMS8690 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel PowerTrench MOSFET |
| 中文描述： | 27 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, POWER 56, 8 PIN |
| 文件頁數： | 3/7頁 |
| 文件大小： | 468K |
| 代理商： | FDMS8690 |
F
M
S
FD
M
S8690 Rev. B
www.fairchildsemi.com
3
Typical Characteristics
T
J
= 25°C unless otherwise noted
Figure 1.
0
1
2
3
4
0
20
40
60
80
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 4V
V
GS
= 4.5V
V
GS
= 3.5V
V
GS
=
10V
V
GS
= 3V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
On Region Characteristics
Figure 2.
0
20
I
D
, DRAIN CURRENT(A)
40
60
80
100
0.8
1.2
1.6
2.0
2.4
2.8
3.2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
=
4V
V
GS
=
3.5V
V
GS
= 3.0V
V
GS
=
10V
V
GS
=
4.5V
N
D
Normal On-Resistance vs Drain Current
and Gate Voltage
Figure 3. Normalized
-80
-40
T
J
, JUNCTION TEMPERATURE
(
o
C
)
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 14A
V
GS
= 10V
N
On Resistance vs Junction
Temperature
Figure 4.
2
4
6
8
10
0
10
20
30
40
50
60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= 150
o
C
T
J
= 25
o
C
I
D
= 50A
r
D
,
O
(
m
)
V
GS
, GATE TO SOURCE VOLTAGE (V)
On-Resistance vs Gate to Source
Voltage
Figure 5.
1.0
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
I
D
,
Transfer Characteristics
Figure 6.
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
100
1000
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0V
I
S
,
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward Voltage
vs Source Current
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDMS8690_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power Trench㈢ MOSFET 30V, 27A, 9.0mз |
| FDMS8692 | 功能描述:MOSFET 30V N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8820 | 功能描述:MOSFET NCh 30V 116A 2.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8848NZ | 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDMS8860AS | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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