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參數資料
| 型號： | FDN302P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 2.2UF 16V 10% X5R 1206 |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 103K |
| 代理商： | FDN302P |
October 2000
2000 Fairchild Semiconductor Corporation
FDN302P Rev C(W)
FDN302P
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
Power management
Load switch
Battery protection
Features
–20 V, –2.4 A.
R
DS(ON)
= 0.055
@ V
GS
= –4.5 V
R
DS(ON)
= 0.080
@ V
GS
= –2.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
–
20
±
12
–
2.4
–
10
0.5
0.46
–
55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
302
FDN302P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN302P | 制造商:Fairchild Semiconductor Corporation 功能描述:SSOT-3 PCH 20V :ROHS COMPLIANT |
| FDN302P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN302P_Q | 功能描述:MOSFET SSOT-3 P-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN304P | 功能描述:MOSFET SSOT-3 P-CH 1.8V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
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