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參數(shù)資料
| 型號： | FDN337N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 2200 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 270K |
| 代理商： | FDN337N |
March 1998
FDN337N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless other wise noted
Symbol
Parameter
FDN337N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage - Continuous
±8
V
Drain/Output Current - Continuous
2.2
A
- Pulsed
10
P
D
Maximum Power Dissipation
(Note 1a)
0.5
W
(Note 1b)
0.46
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
75
°C/W
FDN337N Rev.C
2.2 A, 30 V, R
DS(ON)
= 0.065
@ V
GS
= 4.5 V
R
DS(ON)
= 0.082
@ V
GS
= 2.5 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
-3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
SuperSOT
TM
-3 N-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
G
D
S
SuperSOT -3
337
D
S
G
1998 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| FDN338 | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN338P | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| FDN339AN | N-Channel 2.5V Specified PowerTrench MOSFET |
| FDN340 | Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN340P | Single P-Channel, Logic Level, PowerTrench MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FDN337N | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SOT-23 |
| FDN337N_G | 制造商:Fairchild 功能描述:30V/20A MOSFET SOT-3 (Halogen free) |
| FDN337N_Q | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN337N-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN337 Series 30 V 65 mOhm N-Ch Field Effect Transistor - SSOT-3 |
| FDN337NX | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-Channel 30V 2.2A SuperSOT3 |
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