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參數資料
| 型號： | FDN339AN |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 3000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 259K |
| 代理商： | FDN339AN |
F
FDN339AN Rev. C
Notes:
1:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
a) 250
°
C/W when
mounted on a 0.02 in
2
Pad of 2 oz. Cu.
b) 270
°
C/W on a minimum
mounting pad of 2 oz. Cu.
Electrical Characteristics
T
A
= 25
°
C unless otherwise noted
Symbol
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate-Body Leakage Current,
Forward
I
GSSR
Gate-Body Leakage Current,
Reverse
On Characteristics
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain-Source
On-Resistance
Parameter
Test Conditions
Min
Typ
Max
Units
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
20
V
Breakdown Voltage Temperature
14
mV/
°
C
1
μ
A
nA
100
V
GS
= -8 V, V
DS
= 0 V
-100
nA
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
0.4
0.85
-3
1.5
V
Gate Threshold Voltage
mV/
°
C
V
GS
= 4.5 V, I
D
= 3 A
V
GS
= 4.5 V, I
D
= 3 A, T
J
=125
°
C
V
GS
= 2.5 V, I
D
= 2.4 A
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 3 A
0.029
0.040
0.039
11
0.035
0.061
0.050
A
S
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
10
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
700
175
85
pF
pF
pF
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
Switching Characteristics
(Note 2)
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
8
10
18
5
7
1.2
1.9
16
18
29
10
10
ns
ns
ns
ns
nC
nC
nC
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
V
DS
= 10 V, I
D
= 3 A,
V
GS
= 4.5 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage V
GS
= 0 V, I
S
= 0.42 A
(Note
0.42
1.2
A
V
2)
0.65
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN339AN | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDN339AN | 制造商:Fairchild Semiconductor Corporation 功能描述:20V N-CH. FET 40 MO SSOT3 :ROHS COMPL |
| FDN339AN-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN339AN Series 20 V 35 mOhm N-Channel 2.5V Specified PowerTrench Mosfet |
| FDN340 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Single P-Channel, Logic Level, PowerTrench MOSFET |
| FDN3400 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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