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參數(shù)資料
| 型號： | FDN360 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Single P-Channel PowerTrenchTM MOSFET |
| 中文描述： | 單P溝道MOSFET的PowerTrenchTM |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 231K |
| 代理商： | FDN360 |
F
FDN360P Rev. D
Typical Characteristics
(continued)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0
0.0001
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
P
SINGLE PULSE
R
θ
JA
=270
o
C/W
T
A
=25
o
C
0
2
4
6
8
10
0
2
4
6
8
10
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= -2.0A
V
DS
= -5.0V
-10V
-15V
0
120
240
360
480
600
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
iss
C
oss
C
rss
f=1MHz
V
GS
= 0V
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
R (t) = r(t) * R
R = 270 °C/W
Duty Cycle, D = t /t
2
T - T = P * R JA
P(pk)
t
1
t
2
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
-
D
,
R
DS(ON)
Limit
DC10s
1s
100ms
10ms
1ms
100
μ
s
V
GS
= -10V
SINGLE PULSE
R
θ
JC
=270
o
C/W
T
A
=25
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDN360P | Single P-Channel PowerTrenchTM MOSFET |
| FDN361BN | 30V N-Channel, Logic Level, PowerTrench MOSFET |
| FDN361 | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | N-Channel, Logic Level, PowerTrenchビヌ |
| FDN371N | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDN360P | 功能描述:MOSFET SSOT-3 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN360P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN360P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN360P Series 30 V 80 mOhm Single P-Channel PowerTrench Mosfet - SSOT-3 |
| FDN361 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel, Logic Level, PowerTrenchビヌ |
| FDN361AN | 功能描述:MOSFET SSOT-3 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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