- 您現在的位置：買賣IC網 > PDF目錄375778 > FDN5618P (FAIRCHILD SEMICONDUCTOR CORP) 60V P-Channel Logic Level PowerTrench MOSFET PDF資料下載
參數資料
| 型號： | FDN5618P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60V P-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 60 V, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SUPERSOT-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 385K |
| 代理商： | FDN5618P |
July 2000
PRELIMINARY
2000 Fairchild Semiconductor Corporation
FDN5618P Rev B(W)
FDN5618P
60V P-Channel Logic Level PowerTrench
MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
DC-DC converters
Load switch
Power management
Features
–1.25 A, –60 V.
R
DS(ON)
= 0.170
@ V
GS
= –10 V
R
DS(ON)
= 0.230
@ V
GS
= –4.5 V
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
D
S
G
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Maximum Power Dissipation
P
D
Ratings
–60
±
20
–1.25
–10
0.5
0.46
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
250
75
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
618
FDN5618P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
F
相關PDF資料 |
PDF描述 |
|---|---|
| FDN5630 | 60V N-Channel PowerTrench MOSFET |
| FDP047AN08A0 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| FDP047AN08 | N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mз |
| FDP060AN08A0 | N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз |
| FDB060AN08A0 | N-Channel PowerTrench MOSFET 75V, 80A, 6.0mз |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FDN5618P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23 |
| FDN5618P-CUT TAPE | 制造商:FAIRCHILD 功能描述:FDN5618P Series 60 V 0.170 Ohm P-Channel Logic Level PowerTrench Mosfet SSOT-3 |
| FDN5630 | 功能描述:MOSFET SSOT-3 N-CH 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDN5630 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDN5630N | 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:SuperSOT -3 |
發布緊急采購，3分鐘左右您將得到回復。