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參數資料
型號: FDP100N10
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel PowerTrench㈢ MOSFET
中文描述: 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220, 3 PIN
文件頁數: 1/8頁
文件大小: 464K
代理商: FDP100N10
tm
July 2007
F
2007 Fairchild Semiconductor Corporation
FDP100N10 Rev. A1
www.fairchildsemi.com
1
FDP100N10
N-Channel PowerTrench
MOSFET
100V, 75A, 10m
Features
R
DS(on)
= 8.2m
( Typ.)@ V
GS
= 10V, I
D
= 75A
Fast switching speed
Low gate charge
High performance trench technology for extremely low R
DS(on)
High power and current handing capability
RoHS compliant
Applications
DC to DC converters / Synchronous Rectification
Description
This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
TO-220
G
S
D
D
G
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Thermal Characteristics
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt
Parameter
Ratings
100
±20
75
300
365
4.8
208
1.4
-55 to +175
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
o
C
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
-Continuous (T
C
= 75
o
C)
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
*When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Ratings
0.72
0.5
62.5
Units
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
o
C/W
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相關代理商/技術參數
參數描述
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