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參數資料
| 型號： | FDP14AN06LA |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel PowerTrench MOSFET 60V, 60A, 14.6mз |
| 中文描述： | N溝道的PowerTrench MOSFET的60V的第60A條，14.6mз |
| 文件頁數： | 2/11頁 |
| 文件大小： | 250K |
| 代理商： | FDP14AN06LA |
2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 40
μ
H, I
AS
= 48A.
2:
Pulse width = 100s.
Device Marking
FDB14AN06LA0
FDP14AN06LA0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB14AN06LA0
FDP14AN06LA0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 67A, V
GS
= 10V
I
D
= 60A, V
GS
= 5V
I
D
= 60A, V
GS
= 5V,
T
J
= 175
o
C
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.0102 0.0116
0.0128 0.0146
-
0.028
0.033
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
2900
270
115
24
3.0
12
9.1
7.9
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 30V
I
D
= 60A
I
g
= 1.0mA
31
3.9
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 60A
V
GS
= 5V, R
GS
= 5.1
-
-
-
-
-
-
-
276
-
-
-
-
109
ns
ns
ns
ns
ns
ns
15
169
24
50
-
V
SD
Source to Drain Diode Voltage
I
SD
= 60A
I
SD
= 30A
I
SD
= 60A, dI
SD
/dt = 100A/
μ
s
I
SD
= 60A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
33
29
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP14AN06LA0 | 功能描述:MOSFET 60V N-Ch PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP14AN06LA0 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDP14AN06LA0_Q | 功能描述:MOSFET Single N-Ch 60V Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP14G | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP14N30 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET |
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