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參數資料
| 型號： | FDP15N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET |
| 中文描述： | 15 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 194K |
| 代理商： | FDP15N50 |
2003 Fairchild Semiconductor Corporation
August 2003
FDH15N50 / FDP15N50 / FDB15N50 RevD2
F
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as
PFC Boost
Two-Switch Forward Converter
Single Switch Forward Converter
Flyback Converter
Buck Converter
High Speed Switching
Features
Low Gate Charge Q
g
results in Simple Drive
Requirement
Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
Reduced r
DS(ON)
Reduced Miller Capacitance and Low Input Capacitance
Improved Switching Speed with Low EMI
175°C Rated Junction Temperature
Absolute Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GS
Parameter
Ratings
500
±30
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed
1
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Soldering Temperature for 10 seconds
I
D
15
11
60
300
2
A
A
A
W
P
D
W/
o
C
o
C
o
C
T
J
, T
STG
-55 to 175
300 (1.6mm from case)
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220, TO-263)
0.50
40
62
o
C/W
o
C/W
o
C/W
D
G
S
DRAIN
(FLANGE)
Package
Symbol
DRAIN
GATE
SOURCE
DRAIN
GATE
SOURCE
TO-263AB
FDB SERIES
GATE
SOURCE
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
TO-247
FDH SERIES
DRAIN
(BOTTOM)
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