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參數資料
| 型號： | FDP16N50 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 16 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 1/10頁 |
| 文件大小： | 1004K |
| 代理商： | FDP16N50 |
2007 Fairchild Semiconductor Corporation
FDP16N50 / FDPF16N50 Rev. B
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP16N50 / FDPF16N50
500V N-Channel MOSFET
Features
16A, 500V, R
DS(on)
= 0.38
@V
GS
= 10 V
Low gate charge ( typical 32 nC)
Low C
rss
( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
9.6
16 *
9.6
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
64
64
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
780
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
20
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
200
1.59
52
0.41
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP16N50
FDPF16N50
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.63
2.4
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP16N50_0704 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| FDP16N50U | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel UniFETTM Ultra FRFET MOSFET |
| FDP16T | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP-16-T | 功能描述:集管和線殼 16pos. DIP Plug .100 x .300 RoHS:否 產品種類:1.0MM Rectangular Connectors 產品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節距:1 mm 位置/觸點數量:16 排數:1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector |
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