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參數資料
| 型號： | FDP20N50_07 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 500V N-Channel MOSFET |
| 中文描述： | 500V N溝道MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 1020K |
| 代理商： | FDP20N50_07 |
2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. B
1
www.fairchildsemi.com
F
February 2007
UniFET
TM
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
20A, 500V, R
DS(on)
= 0.23
@V
GS
= 10 V
Low gate charge ( typical 45.6 nC)
Low C
rss
( typical 27 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FDP Series
G
S
D
TO-220F
FDPF Series
G
S
D
D
G
S
Symbol
Parameter
FDP20N50
FDPF20N50
Unit
V
DSS
I
D
Drain-Source Voltage
500
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
20
12.9
20 *
12.9
A
A
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
Drain Current
(Note 1)
80
80
A
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
1110
mJ
Avalanche Current
(Note 1)
20
A
Repetitive Avalanche Energy
(Note 1)
25
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
250
2.0
62
0.5
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
300
°
C
Symbol
Parameter
FDP20N50
FDPF20N50
Unit
R
θ
JC
R
θ
CS
R
θ
JA
Thermal Resistance, Junction-to-Case
0.5
2.0
°
C/W
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FDP20N50F | 功能描述:MOSFET 500V N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDP20N50F_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 20A, 0.26?? |
| FDP20N50T | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PFC+PWM Combination Controller |
| FDP20T | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:IDC DIP & TRANSITION PLUGS .100 [2.54] CENTERLINE |
| FDP-20-T | 功能描述:集管和線殼 20pos. DIP Plug .100 x .300 RoHS:否 產品種類:1.0MM Rectangular Connectors 產品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節距:1 mm 位置/觸點數量:16 排數:1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector |
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